Ever since graphene was first produced in a lab at the University of Manchester in 2004, researchers around the world have been fascinated with its potential in electronics applications.
Graphene possessed all the benefits of carbon nanotubes (CNTs), namely its charged-carrier mobility, but it didn’t have any of the down sides, such as CNTs’ need for different processing techniques than silicon and the intrinsic difficulty of creating interconnects for CNTs.
But all was not easy for applying graphene to electronics applications. One of the fundamental problems for graphene was its lack of a band gap, which left it with a very low on-off ratio measured at about 10 as compared to in the 100s for silicon.
Now this fundamental hurdle has been overcome. Based on research led by Phaedon Avouris at IBM’s IBM T.J. Watson Research Center, Yorktown Heights, New York, IBM is reporting that they have created a significant band gap in graphene.