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Introduction of LiNbO3 Wafers Lithium niobate (LiNbO3) is a crystal material that Ost Photonics utilizes to create wafers for photonic, piezoelectric, and electro-optic applications. These lithium niobate wafers, known for their high refractive index, piezoelectric properties, and nonlinear optical response, are integral to a wide range of applications, including telecommunications, sensing, and computing.

Gallium nitride belongs to the third generation of semiconductor material with hexagonal wurtzite structure. It has the characteristics of large forbidden band width, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness. It has broad application potential and good market prospects in the fields of high-brightness blue, green, purple and white light diodes, blue and purple lasers, and anti-radiation, high-temperature and high-power microwave devices.

GaAs is a semi-conductor material with excellent performance characteristics including direct band gap, high electron mobility, high-frequency low noise, and high conversion efficiency. The RF devices produced with GaAs substrates are commonly used in wireless communication applications, including wireless networks (WLAN), mobile communication, 4G/5G base stations, satellite communications, and WiFi communications. With the development of mini-LED and micro-LED, red light LEDs produced with GaAs substrates are increasingly used for display screens and in AR/VR.

GaSb single crystals can be used as substrate materials because of their lattice constants matching the lattice constants of various ternary and quaternary, III-V compound solid solutions with band gaps in the 0.8~4.3um wide spectral range. The limited mobility of GaSb lattice is greater than that of GaAs, making it a potential application prospect in the manufacture of microwave devices. Growth methods include LEC, VGF and VBG.