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GaAs is a semi-conductor material with excellent performance characteristics including direct band gap, high electron mobility, high-frequency low noise, and high conversion efficiency. The RF devices produced with GaAs substrates are commonly used in wireless communication applications, including wireless networks (WLAN), mobile communication, 4G/5G base stations, satellite communications, and WiFi communications. With the development of mini-LED and micro-LED, red light LEDs produced with GaAs substrates are increasingly used for display screens and in AR/VR.

GaSb single crystals can be used as substrate materials because of their lattice constants matching the lattice constants of various ternary and quaternary, III-V compound solid solutions with band gaps in the 0.8~4.3um wide spectral range. The limited mobility of GaSb lattice is greater than that of GaAs, making it a potential application prospect in the manufacture of microwave devices. Growth methods include LEC, VGF and VBG.