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GaSb single crystals can be used as substrate materials because of their lattice constants matching the lattice constants of various ternary and quaternary, III-V compound solid solutions with band gaps in the 0.8~4.3um wide spectral range. The limited mobility of GaSb lattice is greater than that of GaAs, making it a potential application prospect in the manufacture of microwave devices. Growth methods include LEC, VGF and VBG.

GAGG Ce gadolinium gallium aluminum garnet is a new detection material for high-end CT and security equipment. It has the advantages of high density, high light output, short decay time, and low radioactive background. Besides, it has stable chemical composition, no cleavability and no hygroscopy, and is easy to process and assemble, which can be applied in the fields of radiation detection and high energy physics.

Gallium nitride belongs to the third generation of semiconductor material with hexagonal wurtzite structure. It has the characteristics of large forbidden band width, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness. It has broad application potential and good market prospects in the fields of high-brightness blue, green, purple and white light diodes, blue and purple lasers, and anti-radiation, high-temperature and high-power microwave devices.

GAGG(Ce) gadolinium gallium aluminum garnet is a new detection material for high-end CT and security equipment. It has the advantages of high density, high light output, short decay time, and low radioactive background. Besides, it has stable chemical composition, no cleavability and no hygroscopy, and is easy to process and assemble, which can be applied in the fields of radiation detection and high energy physics.