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SEMIPOWER TECHNOLOGY products: the use of advanced charge balance technology, the new launch of the third generation of superjunction MOSFET series of products, in the first generation of the second generation of superjunction MOSFET products on the basis of a substantial increase in the current density per unit area, while improving the device in the system EMI characteristics, the product features on-resistance (Rdson*A) reduced by 25% lower switching losses, 15% lower switching losses, and 1.5% higher total energy efficiency. We offer circuit designers a wide range of voltage-current options from 500V-900V and 2A-65A.

Semipower Technology SGT N Channel E MOSFET adopts shielded gate deep trench technology with charge balancing function, which reduces the device's characteristic on-resistance (Rsp) and gate charge (Qg), comprehensively improves the product's on-resistance temperature characteristics, and effectively controls The device's on-resistance increases with temperature, thereby significantly enhancing the device's current capability and impact resistance at high temperatures. This N channel power MOSFET will be more suitable for applications in high temperature and harsh environments.

SEMIPOWER TECHNOLOGY: By adopting the most advanced process and layout structure, Planar MOSFET power density is maximized, which significantly reduces the conduction loss in the current conduction process. At the same time, the current flow in the chip cell will be more uniform and stable; for high-frequency switching applications, it effectively reduces the gate charge (Qg), especially the gate-drain charge (Qgd), thus reducing the switching power loss during fast switching. By adopting these advanced technological means, the MOSFET's FOM (Quality Factor (Qg*Rdson)) has been able to achieve an industry-leading level.

Features High ruggedness Low RDS(ON) (Typ 6.0mΩ)@VGS=10V Low Gate Charge (Typ 141nC) Improved dv/dt Capability 100% Avalanche Tested Application: Synchronous Rectification, Li Battery Protect Board, inverter General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features High ruggedness Low RDS(ON) (Typ 7.9mΩ)@VGS=10V Low Gate Charge (Typ 78nC) Improved dv/dt Capability 100% Avalanche Tested Application: Synchronous Rectification, Li Battery Protect Board, inverter General Description This power MOSFET is produced with advanced technology of SAMWVIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features High ruggedness Low RDS(ON) (Typ 6.1mΩ)@VGS=10V Low Gate Charge (Typ 100nC) Improved dv/dt Capability 100% Avalanche Tested Application: Synchronous Rectification, Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features High ruggedness Low RDS(ON) (Typ 5.3mΩ)@VGS=10V Low Gate Charge (Typ 130nC) Improved dv/dt Capability 100% Avalanche Tested Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Using advanced manufacturing technology, better process conditions, fine optimization of the device structure to continuously optimize the product on-resistance, switching characteristics, reliability, etc. and continue to promote product iteration, with a wide range of products, the industry's advanced parameter performance and excellent reliability to become the industry benchmark.

Using advanced manufacturing technology, better process conditions, fine optimization of the device structure to continuously optimize the product on-resistance, switching characteristics, reliability, etc. and continue to promote product iteration, with a wide range of products, the industry's advanced parameter performance and excellent reliability to become the industry benchmark.

Semipower Technology, a leading MOSFET manufacturer, ensures exceptional product performance and reliability through its advanced technology and stringent quality management, simplifying system design while offering cost-effective solutions. Semipower technology combined with advanced lightweight and compact packaging further improves the power density and energy conversion efficiency of the system. Our metal oxide semiconductor fet MOSFET has optimized high current shutdown capability and electrostatic protection capability, which meets a wide range of applications including DC motor drive, lithium battery protection, AC/DC synchronous rectification, etc.

General Description This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

General Description: This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.