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www.samwinsemi.com/...hanced-mode-dfn5-6-mosfet.html

shared by samwin2024 on 02 Dec 24 - No Cached

samwin2024 on 02 Dec 24

Features High ruggedness Low RDS(ON) (Typ 7.9mΩ)@VGS=10V Low Gate Charge (Typ 78nC) Improved dv/dt Capability 100% Avalanche Tested Application: Synchronous Rectification, Li Battery Protect Board, inverter General Description This power MOSFET is produced with advanced technology of SAMWVIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

<div class="cArrow"> </div><div class="cContentInner">Features High ruggedness Low RDS(ON) (Typ 7.9mΩ)@VGS=10V Low Gate Charge (Typ 78nC) Improved dv/dt Capability 100% Avalanche Tested Application: Synchronous Rectification, Li Battery Protect Board, inverter General Description This power MOSFET is produced with advanced technology of SAMWVIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.</div>

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