Group items tagged

Using advanced manufacturing technology, better process conditions, fine optimization of the device structure to continuously optimize the product on-resistance, switching characteristics, reliability, etc. and continue to promote product iteration, with a wide range of products, the industry's advanced parameter performance and excellent reliability to become the industry benchmark.

Using advanced manufacturing technology, better process conditions, fine optimization of the device structure to continuously optimize the product on-resistance, switching characteristics, reliability, etc. and continue to promote product iteration, with a wide range of products, the industry's advanced parameter performance and excellent reliability to become the industry benchmark.

Semipower Technology SGT N Channel E MOSFET adopts shielded gate deep trench technology with charge balancing function, which reduces the device's characteristic on-resistance (Rsp) and gate charge (Qg), comprehensively improves the product's on-resistance temperature characteristics, and effectively controls The device's on-resistance increases with temperature, thereby significantly enhancing the device's current capability and impact resistance at high temperatures. This N channel power MOSFET will be more suitable for applications in high temperature and harsh environments.