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Semipower Technology SGT N Channel E MOSFET adopts shielded gate deep trench technology with charge balancing function, which reduces the device's characteristic on-resistance (Rsp) and gate charge (Qg), comprehensively improves the product's on-resistance temperature characteristics, and effectively controls The device's on-resistance increases with temperature, thereby significantly enhancing the device's current capability and impact resistance at high temperatures. This N channel power MOSFET will be more suitable for applications in high temperature and harsh environments.

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