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Single Crystalline Silicon Ingot The primary application of these silicon materials is in the semiconductor/photovoltaic industry, specifically for manufacturing polycrystalline silicon ingots used in the production of silicon components or solar cells. We offer customization options for any size and shape of silicon materials, including but not limited to silicon tubes, rings, and wafers. Features of DSTC Single Crystal Ingot 1 Resistivity Control. 2 Manufacturability. 3 Devoted to developing large size pulling technique, DSTC is the 1st domestic manufacturer to supply >φ620mm silicon ingots. Single-Crystalline Silicon Ingot Gallery The biggest monocrystalline silicon ingot of OD 620mm in mass production succeeefully in the world. As a proficient silicon semiconductor company, DSTC has rapidly grown into a leader in the domestic semiconductor silicon components industry.

Applied to the semiconductor/photovoltaic industry, with industry-leading casting furnaces and heating zone design, DSTC can mass produce high purity multi-crystalline silicon ingots with uniform grain. Larger size material for more product structures to be processed. with machinability and high mechanical strength.

Silicon Material The main products of SiMaterial series are MCZ/CZ monocrystalline silicon and CZ polycrystalline silicon, including semiconductor monocrystalline or polycrystalline silicon rods, silicon ingots, sheets, columnar crystals. As one of leading silicon material manufacturers, our silicon materials are mainly used for processing silicon components and high-purity silicon targets.

Ring Silicon Made by single or multi-crystalline silicon ingot materials. The outside diameter is up to 650mm. The ring product is used in the dry etching machine as the focus ring, outer electrode, confinement ring. Features of DSTC Silicon Ring 1 Establishment of plasma etching condition. 2 Use as electrodes for RF units. 3 Control sidewall damage of the reactive substance, improve etching aspect ratios and optimize etching surfaces. 4 Improve the uniformity and yield of the edge of silicon wafer.