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SEMIPOWER TECHNOLOGY: By adopting the most advanced process and layout structure, Planar MOSFET power density is maximized, which significantly reduces the conduction loss in the current conduction process. At the same time, the current flow in the chip cell will be more uniform and stable; for high-frequency switching applications, it effectively reduces the gate charge (Qg), especially the gate-drain charge (Qgd), thus reducing the switching power loss during fast switching. By adopting these advanced technological means, the MOSFET's FOM (Quality Factor (Qg*Rdson)) has been able to achieve an industry-leading level.