South Korean researchers have recently made a flexible nonvolatile memory based on memristors—fundamental electronic circuit elements discovered in 2008—using thin graphene oxide films. Memristors promise a new type of dense, cheap, and low-power memory and have typically been made using metal oxide thin films. The new graphene oxide devices should be cheaper and simpler to fabricate—they could be printed on rolls of plastic sheets and used in plastic RFID tags or in the wearable electronics of the future.
"We think graphene oxide can be a good candidate for next-generation memory," says Sung-Yool Choi, who leads flexible devices research at the Electronics and Telecommunications Research Institute in Daejeon, South Korea. Choi and his colleagues reported their device last week in Nano Letters.
